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SOT89 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR
ISSUE 3 - MARCH 2001 FEATURES * High breakdown and low saturation voltage APPLICATIONS * Suitable for video output stages in TV sets * Switching power supplies COMPLEMENTARY TYPE - BF620 PARTMARKING DETAIL - DF
BF621
C
E C B
SOT89
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at T amb =25C Operating and Storage Temperature Range SYMBOL V CBO V CEO V EBO I CM IC P tot T j :T stg VALUE -300 -300 -5 -100 -50 -1 -65 to +150 UNIT V V V mA mA W C
ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated).
PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Colector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Static Forward Current Transfer Ratio Transition Frequency Output Capacitance SYMBOL V (BR)CBO V (BR)CEO V (BR)EBO I CBO I CER I EBO V CE(sat) V BE(sat) h FE fT C obo 50 100 Typical 0.8 Typical MHz pF MIN. -300 -300 -5 -10 -20 -50 -10 -10 -0.6 -0.9 MAX. UNIT CONDITIONS. V V V nA A nA A I C=-10A, I E=0 I C=-1mA, I B=0* I E=-100A, I C=0 V CB=-200V, I E=0 V CB=-200V, I E=0 V CE=-200V, R BE=2.7K V CE=-200V, R BE=2.7K V EB=-5V, I C=0 I C=-30mA, I B=-5mA* I C=-20mA, I B=-2mA* I C=-25mA, V CE=-20V* I C=-10mA, V CE=-10V f=100MHz V CB=-30V, f=1MHz
A
V V
Tamb=150C *Measured under pulsed conditions. For typical characteristics graphs see FMMTA92 datasheet.
TBA

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